Thin films of As2Se3 synthesized by spin-coating

Thin films of amorphous As₂Se₃ were synthesized by spin-coating a solution of an amine salt in thioacetamide on a thoroughly cleaned flat soda glass substrate. Films up to 0.68 μm thick were obtained. Electrical properties and optical absorption coefficient data were measured. The conductivity is of the same order of magnitude as those of evaporated and melt-quenched films. An exponential inverse-temperature law is observed for the variations in electrical conductivity. The optical absorption results indicate that the absorption edge of the synthesized a-As₂Se₃ films is due to an allowed direct transition of energy about 1.77 eV.