Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties |
| |
Authors: | Fang Ze-Bo Tan Yong-Sheng Liu Xue-Qin Yang Ying-Hu and Wang Yin-Yue |
| |
Institution: | School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
| |
Abstract: | Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f^n-shell transitions in Tb^{3+} ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity (ρ) of 9.34×10^{ -4}Ωcm, transmittance over 80% at the visible region and the strong blue emission. |
| |
Keywords: | ZnO films photoluminescence RF reactive sputtering |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |