GaP layers grown on GaN with and without buffer layers |
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Authors: | Li Shu-Ti Cao Jian-Xing Fan Guang-Han Zhang Yong Zheng Shu-Wen Su Jun |
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Affiliation: | Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; Key Laboratory of Electroluminescent Devices of Department of Education of Guangdong Province, Guangzhou 510631, China |
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Abstract: | The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680 du is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH_3, while it turned to be polycrystalline when the substrate is pretreated by TEGa. |
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Keywords: | metal-organic chemical vapour deposition semiconductors gallium phosphide gallium nitride x-ray diffraction |
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