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Raman study of the structure of glasses along the join SiO2GeO2
Authors:Shiv K Sharma  Dean W Matson  John A Philpotts  Ted L Roush
Institution:Hawaii Institute of Geophysics, University of Hawaii, 2525 Correa Road, Honolulu, Hawaii 96822, USA
Abstract:In order to better understand the distribution of tetrahedra in multicomponent tetrahedral network structures of melts and glasses, we have investigated the Raman spectra of binary SiO2GeO2 glasses. We compare the Raman spectral features of the end-member glasses and discuss their vibrational origins. The mixing of GeO2 and SiO2 melts results in a continuous random network structure of TO4 tetrahedra (T  Si, Ge) in the glass. Raman bands corresponding to the asymmetric stretch (vas) of oxygen in GeOGe, SiOSi and SiOGe bonds are observed in the glasses having intermediate compositions along the SiO2GeO2 join. The presence of three distinct vas (TOT) bands in the spectrum of a glass having Si/Ge one reveals that a considerable degree of SiGe disorder exists in the glass. The presence of a single symmetric oxygen stretching band in the spectra of binary SiO2GeO2 glasses indicates that the symmetric stretch modes (vs) of oxygen in SiOSi, SiOGe and GeOGe bonds are strongly coupled. An observed decrease in the halfwidth of the vs (TOT) band in the spectra of SiO2GeO2 glasses with increasing concentration of GeO2 may be attributed to a decrease in the average TOT bond angle and a predominance of six-membered ring structures. Results of the present study support the assignment of the bands in the 900–1200 cm?1 region of the alumino-silicate glasses, spectra to the vas(AlOSi) and vas(SiOSi) modes. In contrast to the alumino-silicate glasses, however, the SiO2GeO2 glasses have a much higher degree of disorder of the network-forming cations.
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