Processes on the target surface under vanadium reactive sputtering in Ar-O2 mixtures |
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Authors: | V. A. Marchenko |
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Affiliation: | (1) Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia |
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Abstract: | Experimental realization of the hysteresis-free mode of vanadium reactive magnetron sputtering in Ar-O2 mixtures made it possible to perform detailed measurements of the discharge current-voltage characteristics for the first time. They appeared to be not smooth, as predicted by the existing model of reactive sputtering, but having a kink. The experimental data can be interpreted on the assumption that the target surface is oxidized at a depth not less than two monolayers at low ion current densities. |
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