| 适用于BiCMOS电路模拟的低温载流子迁移率模型 |
| |
| 引用本文： | 吴金,魏同立.适用于BiCMOS电路模拟的低温载流子迁移率模型[J].固体电子学研究与进展,1996,16(2):168-173. |
| |
| 作者姓名： | 吴金 魏同立 |
| |
| 作者单位： | 东南大学微电子中心 |
| |
| 基金项目： | 国家自然科学基金,博士点基金 |
| |
| 摘 要： | 在分析各种主要散射物理机制的基础上，建立起依赖温度、浓度和电场作用的载流子迁移率模型，并将体效应与表面效应有机地结合在一起。该模型物理意义明确、拟合参量适中、精度高、适用范围广，特别适合包含ＢＪＴ和ＭＯＳ结构的ＢｉＣＭＯＳ电路模拟的需要。
|
| 关 键 词： | 迁移率，散射，屏蔽，体效应，表面效应 |
A Low Temperature Carrier Mobility Model for BiCMOS Circuit Simulation |
| |
| Wu Jin, Wei Tougli.A Low Temperature Carrier Mobility Model for BiCMOS Circuit Simulation[J].Research & Progress of Solid State Electronics,1996,16(2):168-173. |
| |
| Authors: | Wu Jin Wei Tougli |
| |
| Abstract: | Low temperatures carrier mobility model, considering dependence on temperature, impurity and electrical field and combining the bulk and surface effects,is presented on the basis of analysis of all major scattering mechanisms. This kind of model which has clear physical concept, moderate fitting parameters, high accuracy and wide range applications,is especially suited for BiCMOS circuits simulation including BJT and MOS operation modes. |
| |
| Keywords: | Mobility Scattering Screening Bulk Effects Surface Effects |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
