| 金属膜电阻器用高阻溅射靶材研究 |
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| 引用本文： | 毛大立,王绪亭.金属膜电阻器用高阻溅射靶材研究[J].电子元件与材料,1998,17(2):11-12,48. |
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| 作者姓名： | 毛大立 王绪亭 |
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| 作者单位： | [1]上海交通大学材料科学系 [2]上海无线电一厂 |
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| 摘 要： | 利用真空熔炼的方法，研制出用于金属膜电阻器生产用的高阻溅射靶材。用该靶材可溅射制备得到薄膜电阻值达１～１０ｋΩ，电阻温度系数α在±１００×１０－６℃－１以内，脉冲稳定性在０．５％以下的电阻体。其阻值和其他电性能稳定可靠，分档集中，产品性能达到ＧＢ５８７３－８６标准，适用于金属膜电阻器生产。
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| 关 键 词： | 金属膜电阻器真空熔炼高阻靶材 |
High resistance sputtering target material for metal film resistors |
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| Mao Dali,Wang Jiamin,Zhang Lanting,Mao Lizhong,Xu Ying,Wu Jiansheng.High resistance sputtering target material for metal film resistors[J].Electronic Components & Materials,1998,17(2):11-12,48. |
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| Authors: | Mao Dali Wang Jiamin Zhang Lanting Mao Lizhong Xu Ying Wu Jiansheng |
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| Abstract: | High resistance sputtering target material for metal film resistors has been developed by vacuum smelting. With the target material, the thin film resistor can be acquired, of which the resistance is 1 10 kΩ, TCR within ±100×10 6 ℃ 1 . Resistance and other electric properties are stable and reliable(3 refs ) |
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| Keywords: | metal film resistors vacuum smelting high resistance target material |
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