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Modelling of contact effects in microcrystalline silicon thin-film transistors
Authors:Kah-Yoong Chan  Elias Hashem  Aad Gordijn  Helmut Stiebig and Dietmar Knipp
Institution:(1) School of Engineering and Science, Jacobs University Bremen, 28759 Bremen, Germany;(2) IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany;(3) Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor, Malaysia;(4) Malibu GmbH & Co. KG, 33609 Bielefeld, Germany
Abstract:Hydrogenated microcrystalline silicon has recently emerged as a promising material system for large-area electronic applications such as thin-film transistors and solar cells. In this paper, thin-film transistors based on microcrystalline silicon were realized with charge carrier mobilities exceeding 40 cm2/Vs. The electrical characteristics of the microcrystalline silicon thin-film transistors are limited by the influence of contact effects. The influence of the contact effects on the charge carrier mobility was investigated for transistors with different dimensions of the drain and source contacts. The experimental results were compared to an electrical model which describes the influence of the drain and source contact dimension on the transistor parameters. Furthermore, the Transmission Line Method was applied to investigate the contact effects of the thin-film transistors with different drain and source contact dimensions. Finally, optimized device geometries like the channel length of the transistor and dimension of the drain and source contacts were derived for the microcrystalline transistors based on the electrical model.
Keywords:PACS" target="_blank">PACS  81  07  Bc  81  15  Gh  85  30  De  85  30  Tv
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