Comparison of MBE Growth of InSb on Si (001) and GaAs (001) |
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Authors: | T Lien Tran Fariba Hatami W Ted Masselink Vas P Kunets GJ Salamo |
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Institution: | 1.Department of Physics,Humboldt-Universit?t zu Berlin,Berlin,Germany.;2.Department of Physics,University of Arkansas,Fayetteville,USA |
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Abstract: | We describe the epitaxial growth of InSb films on both Si (001) and GaAs (100) substrates using molecular-beam epitaxy and
discuss the structural and electrical properties of the resulting films. The complete 2 μm InSb films on GaAs (001) were grown
at temperatures between 340°C and 420°C and with an Sb/In flux ratio of approximately 5 and a growth rate of 0.2 nm/s. The
films were characterized in terms of background electron concentration, mobility, and x-ray rocking curve width. Our best
results were for a growth temperature of 350°C, resulting in room-temperature mobility of 41,000 cm2/V s. For the growth of InSb on Si, vicinal Si(001) substrates offcut by 4° toward (110) were used. We investigated growth
temperatures between 340°C and 430°C for growth on Si(001). In contrast to growth on GaAs, the best results were achieved
at the high end of the range of T
S = C, resulting in a mobility of 26,100 cm2/V s for a 2 μm film. We also studied the growth and properties of InSb:Mn films on GaAs with Mn content below 1%. Our results
showed the presence of ferromagnetic ordering in the samples, opening a new direction in the diluted magnetic semiconductors. |
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Keywords: | InSb GaAs Si substrates electron mobility x-ray diffraction (In Mn)Sb diluted magnetic semiconductor |
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