Physical properties of bulk single-crystal wafers of gallium nitride |
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| Authors: | V A Ivantsov V A Sukhoveev V I Nikolaev I P Nikitina V A Dmitriev |
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| Institution: | (1) A. F. Ioffe Physico-technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride
(GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis showed that the crystals have wurzite
structure 2H-GaN. From their luminescence characteristics and optical absorption spectra the crystals are similar to 2H-GaN epitaxial layers described in the literature.
Fiz. Tverd. Tela (St. Petersburg) 39, 858–860 (May 1977) |
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