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STM study of low pressure adsorption of silane on Si(111)7 × 7 |
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| Authors: | D. Albertini F. Thibaudau L. Masson F. Salvan |
| Affiliation: | Groupe de Physique des Etats Condensés - URA CNRS 783, Université de la Méditerrannée, Faculté de Luminy, case 901, 13288, Marseille Cedex 9, France |
| Abstract: | We report a study of silane adsorption on the Si(111)7 × 7 surface. We have been interested in the first stages of chemisorption at room temperature. Reactive sites of the unit cell have been clearly identified on Scanning Tunneling Microscopy (STM) images: the reaction involves the rest atom and the adjacent adatom of the DAS structure with preferential adsorption on the center adatom. We propose an original chemisorption mechanism which leads to the formation of two SiH2 species by chemisorption and involves the breaking of Si---Si backbonds of the adatom. |
| Keywords: | Chemical vapor deposition Chemisorption Low index single crystal surfaces Scanning tunneling microscopy Silane Silicon |
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