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X-Ray Luminescence of Defects in Spinel Single Crystals
Authors:V T Gritsyna  Yu G Kazarinov  V A Kobyakov  Sickafus
Institution:(1) Kharkov National University, 4 Svoboda Sq., Kharkov, 61077, Ukraine;(2) Los Alamos National Laboratory, Los Alamos, USA
Abstract:The flareup of x-ray luminescence in spinel single crystals (MgAl2O4) depending on the time of x-ray irradiation and the decay of fluorescence depending on the time elapsed after the termination of irradiation have been investigated. These dependences were measured at different powers of the irradiation dose (power of the x-ray tube) and at different temperatures of the samples. The experimental results suggest the existence of large-size complexes of defects, which include antisite defects and impurity ions, the exchange of charge carriers between which during and after irradiation leads to luminescence of the impurity ions. Transfer of charge carriers between isolated elements of the pairs of antisite defects (not interacting with the impurity ions) leads to the formation of a competing channel of recombination luminescence in the UV region of the spectra. The decay of fluorescence attributable to transitions in the Mn2+ and Cr3+ ions depending on the time elapsed after the termination of x-ray irradiation points to the existence of various combinations of antisite defects in the surroundings of these ions.
Keywords:magnesium-aluminate spinel  x-ray luminescence  spatial distribution of traps  optical center  luminescence center
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