Role of MeV Ion Implantation in Limiting Transient Enhanced Diffusion of Born Atoms in Silicon |
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作者姓名: | LiuChanglong B.J.sealy |
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作者单位: | [1]不详 [2]UniversityofSurrey,SurreyCentreforResearchinIonBeamApplications,Guildford,Surrey,GU27XH,UK |
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摘 要: |
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关 键 词: | p-n结 离子注入 瞬时增强扩散 硅 |
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