Athermal annealing of Mg-implanted GaAs

High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the radial direction from the laser-exposed spot. No evidence of annealing, however, was observed at any position on the Mg-implanted GaAs sample that was subjected to a laser pulse exposure on the unimplanted side. The Mg implant did not show any redistribution for the laser-shocked annealing, in contrast to the conventional rapid thermal annealing. PACS 61.72.Vv; 62.50.+p; 71.55.Eq; 79.20.Ds; 81.05.Ea