Piezoresistive effect in p-type polycrystalline diamond films |
| |
| Authors: | Liang Fang Wanlu Wang Peidao Ding Kejun Liao Jian Wang |
| |
| Institution: | (1) Department of Applied Physics College of Science, Chongqing University, 400044 Chongqing, China;(2) Department of Material Science, College of Material Science & Engineering, 400044 Chongqing, China |
| |
| Abstract: | The piezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline
model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible
for the piezoresistive effect in the p-type polycrystalline diamond films. The gauge-factor calculation formula including
the effect of both background scattering and grain-boundary scattering were obtained, and the calculation results are in accordance
with the experimental results.
Project supported by the National Naturl Sciences Foundation of China (Grant No. 69486001). |
| |
| Keywords: | diamond films piezoresistive effect grain-boundary scattering valence bands split-off |
| 本文献已被 SpringerLink 等数据库收录！ |
