The production and destruction of the C-related 969 meV absorption band in Si

Data are reported on the production of the 969 meV absorption line as functions of the carbon concentration and radiation dose in FZ and CZ silicon. With increasing dose of 2 MeV electrons the absorption first increases and then decreases. Simple equations are presented which describe the growth and decay. It is shown that, in favourable circumtances, carbon concentrations as low as 10¹⁴ cm⁻³ can be detected in silicon by means of the 969 meV absorption line. We verify that the 969 meV line anneals out at temperatures >500 K but may increase between 450 and 500 K. We show that the increase is largest in samples irradiated at room temperature to a small dose relative to the carbon concentration.