| C波段GaAs PIN二极管单片单刀单掷开关 |
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| 引用本文： | 吴茹菲,张健,尹军舰,张海英. C波段GaAs PIN二极管单片单刀单掷开关[J]. 半导体学报, 2008, 29(5): 879-882 |
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| 作者姓名： | 吴茹菲 张健 尹军舰 张海英 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 基于中国科学院微电子研究所的GaAs PIN二极管工艺,研究了一种单片单刀单掷开关.为了仿真该单片单刀单掷开关,研制开发了GaAs PIN二极管的小信号模型.在5.5～7.5GHz的频段内,开关正向导通时的插入损耗低于1.6dB,回波损耗大于10dB,开关关断状态的隔离度大于23dB.
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| 关 键 词： | C波段 单刀单掷 开关 GaAs PIN二极管 |
| 文章编号： | 0253-4177(2008)05-0879-04 |
| 修稿时间： | 2007-10-29 |
A C-Band Monolithic GaAs PIN Diode SPST Switch |
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| Wu Rufei,Zhang Jian,Yin Junjian and Zhang Haiying. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. Chinese Journal of Semiconductors, 2008, 29(5): 879-882 |
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| Authors: | Wu Rufei Zhang Jian Yin Junjian Zhang Haiying |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | A monolithic single pole single throw (SPST) switch is developed with GaAs PIN diode technology from IMECAS.A novel small signal model of a GaAs PIN diode is developed for circuit simulation.The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7.5GHz.The measured 1dB power gain compression point is about 20dBm. |
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| Keywords: | C-band SPST switches GaAs PIN diodes |
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