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用面垒探测器测定n型硅中少数载流子的扩散长度
引用本文:唐璞山,贺明霞,陈佐禹,王楚.用面垒探测器测定n型硅中少数载流子的扩散长度[J].物理学报,1963,19(7):448-455.
作者姓名:唐璞山  贺明霞  陈佐禹  王楚
作者单位:复旦大学物理系
摘    要:当α粒子穿入Au-Si面垒探测器的扩散区时,其产生的非平衡少数载流于扩散到势垒边界而被收集,因此在探测器两端有一输出脉冲。本文从理论上计算了扩散区中的收集效率,获得了收集效率和扩散长度的函数关系。另外将实验上测定的收集效率与理论加以比较,从而确定少数载流子的扩散长度。 关键词

收稿时间:8/6/1962 12:00:00 AM

THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR
TANG PU-SHAN,HUO MING-HSIA,CHEN TSO-YU and WANG CHU.THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR[J].Acta Physica Sinica,1963,19(7):448-455.
Authors:TANG PU-SHAN  HUO MING-HSIA  CHEN TSO-YU and WANG CHU
Abstract:The non-equilibrium minority carriers produced by the α-particles while penetrating into the diffused layer of the Au-Si surface barrier detector diffuse into the boundary of barrier layer and are then collected. Hence an output pulse is obtained at the two terminals of the detector. The collecting efficiency in the diffused layer and the relations between the collecting efficiency and the diffusion length are calculated. The experimental results have been compared with the theory, and the diffusion length of minorty carriers is then determined.
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