| Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers |
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| 引用本文： | 姚飞 薛春来 成步文 王启明. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers[J]. 中国物理快报, 2007, 24(6): 1686-1689 |
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| 作者姓名： | 姚飞 薛春来 成步文 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National High Technology Research and Development Programme of China under Grant No 2006AA03Z0415, the Major State Basic Research Programme of China under Grant No 2006CB302802, and the National Natural Science Foundation of China under Grant Nos 60336010 and 60676005. |
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| 摘 要： | Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical JainRoulston （J-R） model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.
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| 关 键 词： | 硼 能带隙 断面收缩 分子分层 |
| 收稿时间： | 2007-03-14 |
| 修稿时间： | 2007-03-14 |
Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers |
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| YAO Fei,XUE Chun-Lai,CHENG Bu-Wen,WANG Qi-Ming. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers[J]. Chinese Physics Letters, 2007, 24(6): 1686-1689 |
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| Authors: | YAO Fei XUE Chun-Lai CHENG Bu-Wen WANG Qi-Ming |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain--Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors. |
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| Keywords: | 71.20.Nr 71.55.Ak 71.70.Fk |
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