| High-Power Diode-Side-Pumped Intracavity-Frequency-Doubled Continuous Wave 532 nm Laser |
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| 作者姓名： | 张玉萍 张会云 钟凯 李喜福 王鹏 姚建铨 |
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| 作者单位： | [1]College of Science, Shandong University of Science and Technology, Qingdao 266510 [2]Key Laboratory of Optoelectrics Information Science and Technology （Ministry of Eduction）, Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 |
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| 摘 要： |
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| 关 键 词： | 高功率二极管 频率 激光 光波 |
| 收稿时间： | 2007-5-9 |
| 修稿时间： | 2007-05-09 |
High-Power Diode-Side-Pumped Intracavity-Frequency-Doubled Continuous Wave 532nm Laser |
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| ZHANG Yu-Ping,ZHANG Hui-Yun,ZHONG Kai,LI Xi-Fu,WANG Peng,YAO Jian-Quan.High-Power Diode-Side-Pumped Intracavity-Frequency-Doubled Continuous Wave 532 nm Laser[J].Chinese Physics Letters,2007,24(8):2242-2244. |
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| Authors: | ZHANG Yu-Ping ZHANG Hui-Yun ZHONG Kai LI Xi-Fu WANG Peng YAO Jian-Quan |
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| Institution: | 1College of Science, Shandong University of Science and Technology, Qingdao 266510 ;2 Key Laboratory of Optoelectrics Information Science and Technology (Ministry of Eduction |
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| Abstract: | An efficient and high-power diode-side-pumped cw 532nm green laser based on a V-shaped cavity geometry, and capable of generating 22.7 W green radiation with opticM conversion effciency of 8.31%, has been demonstrated. The laser is operated with rms noise amplitude of less than 1% and with M2-parameter of about 6.45 at the top of the output power. This laser has the potential for scaling to much higher output power. |
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| Keywords: | 42 55 Xi 42 55 Rz 42 60 Pk 42 65 Lh 42 65 Ky |
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