| Stimulated Raman Scattering in a Weakly Polar Ⅲ-Ⅴ Semiconductor： Effect of dc Magnetic Field and Free Carrier Concentration |
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| 作者姓名： | M. Singh P. Aghamkar P. K. Sen |
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| 作者单位： | [1]Department of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar-125001, India [2]Department of Applied Physics, S.G.S. Institute of Technology and Science, 23-Park Road, Indore-452003, India |
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| 基金项目： | Support by C.S.I.R. and D.S.T. （FIST）, New Delhi, India.
The authors are indebted to Professor Nawal Kishore for constant encouragement. |
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| 摘 要： | Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering （SITS） of an electromagnetic pump wave in a transversely magnetized weakly polar semicon- ductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SItS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SItS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.
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| 关 键 词： | 散射 半导体 载波 浓缩 |
| 收稿时间： | 2007-1-26 |
| 修稿时间： | 2007-01-26 |
Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration |
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| M. Singh P. Aghamkar P. K. Sen.Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration[J].Chinese Physics Letters,2007,24(8):2245-2248. |
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| Authors: | M Singh P Aghamkar P K Sen |
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| Institution: | 1 Department of Applied Physics, Guru dambheshwar University of Science and Technology, Hisar-125001, India 2 Department of Applied Physics, S.G.S. Institute of Technology and Science, 23-Park Road, Indore-452003, India |
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| Abstract: | Using the hydrodynamic model of semiconductor plasmas, we perform ananalytical investigation of stimulated Raman scattering (SRS) of an electromagnetic pump wave in a transversely magnetized weakly polarsemiconductor arising from electron-density perturbations and molecularvibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SRS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SRS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field. |
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| Keywords: | 42 65 -k 42 65 Ky 42 55 Ye |
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