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Dynamics of Efficiency Change by Temperature in Diode Pumped Nd:YAG Heat Capacity Laser
引用本文:壬小军 唐兵 束小建. Dynamics of Efficiency Change by Temperature in Diode Pumped Nd:YAG Heat Capacity Laser[J]. 中国物理快报, 2007, 24(7): 1930-1933
作者姓名:壬小军 唐兵 束小建
作者单位:Institute of Applied Physics and Computational Mathematics, PO Box 8009-11, Beijing 100088
摘    要:We investigate the influence of temperature on the efficiency of diode pumped Nd:YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.

关 键 词:温度 Nd:YAG 二极管 热容积
收稿时间:2007-01-17
修稿时间:2007-01-17

Dynamics of Efficiency Change by Temperature in Diode Pumped Nd:YAG Heat Capacity Laser
WANG Xiao-Jun,TANG Bing,SHU Xiao-Jian. Dynamics of Efficiency Change by Temperature in Diode Pumped Nd:YAG Heat Capacity Laser[J]. Chinese Physics Letters, 2007, 24(7): 1930-1933
Authors:WANG Xiao-Jun  TANG Bing  SHU Xiao-Jian
Affiliation:Institute of Applied Physics and Computational Mathematics, PO Box 8009-11, Beijing 100088
Abstract:We investigate the influence of temperature on the efficiency of diode pumped Nd:YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.
Keywords:42.55.Ah  42.55.Xi
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