| Electron Transport in Ga-Rich InxGa1-xN Alloys |
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| 引用本文： | A. Yildiz S. B. Lisesivdin S. Acar M. Kasap M. Bosi. Electron Transport in Ga-Rich InxGa1-xN Alloys[J]. 中国物理快报, 2007, 24(10): 2930-2933 |
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| 作者姓名： | A. Yildiz S. B. Lisesivdin S. Acar M. Kasap M. Bosi |
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| 作者单位： | [1]Department of Physics, Ahi Evran University, Kirsehir, Turkey [2]Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey [3]CNR-IMEM Institute, Area delle Scienze 37/A, I-43010 Fontanini, Parma, Italy |
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| 基金项目： | Supported by the State of Planning 0rganization of Turkey under Grant No 2001K120590. |
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| 摘 要： | Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys grown by metal-organic vapour phase epitaxy （MOVPE） technique are carried out as a function of temperature （15-350 K）. Within the experimental error, the electron concentration in Inx Ga1-x N alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys are considered in the metallic phase near the Mort transition. It has been shown that the temperaturedependent metallic conductivity can be well explained by the Mort model that takes into account electron-electron interactions and weak localization effects.
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| 关 键 词： | 电子传输 镓 合金 温度 |
| 收稿时间： | 2007-02-28 |
| 修稿时间： | 2007-02-28 |
Electron Transport in Ga-Rich InxGa1-xN Alloys |
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| A. Yildiz,S. B. Lisesivdin,S. Acar,M. Kasap,M. Bosi. Electron Transport in Ga-Rich InxGa1-xN Alloys[J]. Chinese Physics Letters, 2007, 24(10): 2930-2933 |
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| Authors: | A. Yildiz S. B. Lisesivdin S. Acar M. Kasap M. Bosi |
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| Affiliation: | 1.Department of Physics, Ahi Evran University, Kirsehir, Turkey ;2.Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey ; 3.CNR-IMEM Institute, Area delle Scienze 37/A, I-43010 Fontanini, Parma, Italy |
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| Abstract: | |
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| Keywords: | 72.20.My 72.20.Fr 72.80.Ey |
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