| X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si（100） Using C60 and Si |
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| 引用本文： | 刘衍芳,刘金峰,徐彭寿,潘海斌.X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si（100） Using C60 and Si[J].中国物理快报,2007,24(7):2022-2024. |
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| 作者姓名： | 刘衍芳 刘金峰 徐彭寿 潘海斌 |
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| 作者单位： | National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50572100. |
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| 摘 要： | The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.
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| 关 键 词： | X射线 光电子 光谱学 高能量电子 |
| 收稿时间： | 2007-2-18 |
| 修稿时间： | 2007-02-18 |
X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si |
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| LIU Yan-Fang,LIU Jin-Feng,XU Peng-Shou,PAN Hai-Bin.X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si[J].Chinese Physics Letters,2007,24(7):2022-2024. |
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| Authors: | LIU Yan-Fang LIU Jin-Feng XU Peng-Shou PAN Hai-Bin |
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| Institution: | National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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| Abstract: | The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC |
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| Keywords: | 61 14 Hg 71 20 Ny 79 60 -i |
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