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A Single-Layer Magnetic Atom Chip for Trapping an Array of Bose-Einstein Condensate
引用本文:李晓林 柯敏 颜波 王育竹. A Single-Layer Magnetic Atom Chip for Trapping an Array of Bose-Einstein Condensate[J]. 中国物理快报, 2007, 24(6): 1545-1548
作者姓名:李晓林 柯敏 颜波 王育竹
作者单位:[1]Key Laboratory for Quantum Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 [2]Center for Cold Atom Physics, Chinese Academy of Sciences, Shanghai 201800
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 10334050 and 10474105, the State Key Basic Research Programme of China under Grant No 2006CB921202, and the Key 0riental Project of Chinese Academy of Sciences under Grant Nos KGCX2-SW-100 and KGCX3-SYW-405.
摘    要:

关 键 词:单一分层 磁性原子芯片 数组 玻色-爱因斯坦凝聚物
收稿时间:2006-12-05
修稿时间:2006-12-05

A Single-Layer Magnetic Atom Chip for Trapping an Array of Bose--Einstein Condensate
LI Xiao-Lin,KE Min,YAN Bo,WANG Yu-Zhu. A Single-Layer Magnetic Atom Chip for Trapping an Array of Bose--Einstein Condensate[J]. Chinese Physics Letters, 2007, 24(6): 1545-1548
Authors:LI Xiao-Lin  KE Min  YAN Bo  WANG Yu-Zhu
Affiliation:1 Key Laboratory for Quantum Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 2 Center for Cold Atom Physics, Chinese Academy of Sciences, Shanghai 201800
Abstract:We propose a simple single-layer magnetic microtrap configuration which can trap an array of magneticallytrapped Bose-Einstein condensate. The configuration consists of two series of parallel wires perpendicular to each other and all of the crossing points are cut off for maintaining the uniformity of the current. We analyse the trapping potential, the position of trapping centres and the uniformity of the array of the traps. The trapping depth and trapping frequency with different parameters are also calculated. Lastly, the effect of the cut-off crossing points, dissipate power, chip production are introduced concisely.
Keywords:32.80.Pj  03.75.Be  39.25.+k
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