| Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films |
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| 作者姓名： | 周觅 陈韬 谭晶晶 茹国平 蒋玉龙 高冉 屈新萍 |
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| 作者单位： | Department of Microelectronics, Fudan University, Shanghai 200433 |
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| 基金项目： | Supported by the National Natural Science Foundation in China under Grant No 60476010, the Science and Technology Committee of the Shanghai Municipality （04QMX1407）, the National Basic Research Programme of China under Grant No 2006CB302703, and the International Research Training Group （Materials and Concepts for Advanced Interconnects）. |
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| 摘 要： | The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.
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| 关 键 词： | TaN基底 原子 沉积作用 薄膜 |
| 收稿时间： | 2006-12-27 |
| 修稿时间： | 2006-12-27 |
Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films |
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| ZHOU Mi,CHEN Tao,TAN Jing-Jing,RU Guo-Ping,JIANG Yu-Long,LIU Ran,QU Xin-Ping.Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films[J].Chinese Physics Letters,2007,24(5):1400-1402. |
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| Authors: | ZHOU Mi CHEN Tao TAN Jing-Jing RU Guo-Ping JIANG Yu-Long LIU Ran QU Xin-Ping |
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| Institution: | Department of Microelectronics, Fudan University, Shanghai 200433 |
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| Abstract: | The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330°C. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed. |
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| Keywords: | 85 40 Ls 81 15 Gh 81 65 -b |
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