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高温闪烁晶体Ce:YAP的化学腐蚀形貌
引用本文:李红军,赵广军,曾雄辉,钱振英,郭聚平,周圣明,徐军.高温闪烁晶体Ce:YAP的化学腐蚀形貌[J].人工晶体学报,2004,33(1):123-125.
作者姓名:李红军  赵广军  曾雄辉  钱振英  郭聚平  周圣明  徐军
作者单位:中国科学院上海光学精密机械研究所,上海,201800
摘    要:本文报导了Ce:YAP晶体位错蚀坑的腐蚀条件;同时报导了几个主要晶面的位错蚀坑形貌,(100)面呈扁豆形,(010)面呈菱形,(101)面呈椭圆形,这些形状与各自晶面的对称性一致.通过蚀坑形貌在晶体横截面内观察到了小面生长核心区和熔质尾迹等缺陷,并分析了其成因.

关 键 词:Ce:YAP晶体  闪烁晶体  位错  腐蚀形貌  
文章编号:1000-985X(2004)01-0123-03

Etching Figures in High-temperature Scintillating Crystal Ce:YAP
LI Hong-jun,ZHAO Guang-jun,ZENG Xiong-hui,QIAN Zhen-ying,GUO Ju-ping,ZHOU Sheng-ming,XU Jun.Etching Figures in High-temperature Scintillating Crystal Ce:YAP[J].Journal of Synthetic Crystals,2004,33(1):123-125.
Authors:LI Hong-jun  ZHAO Guang-jun  ZENG Xiong-hui  QIAN Zhen-ying  GUO Ju-ping  ZHOU Sheng-ming  XU Jun
Abstract:The reasonable etching condition of dislocation in Ce:YAP was found out by a series of etching experiments. The typical etching figures of several main faces were reported. They show rhombus on (010) face, haricot-beam shape on (100) face and elliptic form on (101) face. The symmetry of an etch pit corresponds with the symmetry of a face on which the pit is created. The defects such as facet growth core and wake of melt were observed from etching figures on (101) face, and their causes of formation were analyzed.
Keywords:Ce:YAP crystal  scintillating crystal  dislocation  etching figure
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