Limits on charge carrier mobility in suspended graphene due to flexural phonons |
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| Authors: | Castro Eduardo V Ochoa H Katsnelson M I Gorbachev R V Elias D C Novoselov K S Geim A K Guinea F |
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| Institution: | Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid, Spain. |
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| Abstract: | The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T?10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/V s at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate. |
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