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Synthesis of fluorine doped silica gel and its properties at high temperature
Authors:Tsunehiro Tsukada  Masahiro Shinmei and Toshio Yokokawa
Institution:

Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo 060, Japan

Abstract:Fluorine doped silica gels were synthesized by using the sol-gel processes of (A) SiF4(g) and H2O(1) and (B) the mixed solution of Si(OC2H5)4, C2H5OH, H2O and H2SiF6. By the former process we obtained a gel of relatively high fluorine content (8–12 at.%F), while we could synthesize the gel of 0–12 at.% F by adjusting the F/Si ratio of the starting solution mixtures by the latter process.

The defluorination behavior and the structural change of these gels at high temperature were studied by heating-mass spectrometry, IR and ESR measurements. The results revealed the following: (1) defluorination by liberation of SiF4(g) was admitted from temperatures at about 400°C and was controlled by the diffusion of fluorine in the gel bulk. (2) The peak separation analysis for the IR band of 1300-900 cm?1, where the stretching vibrations of Si---O and Si---F appear, showed that the change of the band shape resulted from the increase or the decrease of the Si---F bonds and the change of the bond angle of Si---O---Si as well as the change of the force constant accompanied by fluorination or defluorination. (3) The defects of the Si E′ center were induced by X-ray irradiation depending on the degree of the defluorination, and were reduced by the heat treatment. However, with the heat treatment at temperatures higher than 1000°C, the E′ center increased again. The IR spectra suggest that this behavior might correspond to the gel-glass trasition.

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