Surface photovoltage in semiconductors under sub-band-gap illumination: continuous distribution of surface states |
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Authors: | L Szaro J R?bisz J Misiewicz |
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Institution: | (1) Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, PL 50–370 Wrocław, Poland, PL |
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Abstract: | Surface photovoltage spectra in semiconductors are analyzed when the sub-band-gap illumination induces the electron transitions
from surface states to the conduction band under the assumption that distribution of surface states is continuous. From analysis
performed it follows that the fictitious densities of surface states can be induced due to the wavelength dependence of the
photoionization capture cross-section of surface states for electrons and by the electron recombination capture cross-section
of surface states which depends on the energy position of surface states in the energy gap. The high illumination intensity
(laser illumination), which makes completely empty the surface states, can eliminate the fictious surface states when the
density of surface states is not very large, the temperature of measurements is low, and the surface potential barrier is
high.
Received: 24 June 1998 / Accepted: 29 March 1999 / Published online: 14 June 1999 |
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Keywords: | PACS: 73 20 73 30 72 40 S5 11 |
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