Synthesis and characterization of C3N4 crystal (I)

A successful experimental synthesis of pure crystalline β- and α-C₃N₄ films on Si(100) substrate was carried out by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). It is found that a mixed-phase C₃-_I-Si_xN_y buffer layer was formed between the Si substrate and the C-N film. A “lattice match selection” was proposed to study the growth mechanism of C₃N₄ clusters composed of many crystal columns with hexagonal facets. Project supported by the National Natural Science Foundation of China and the Chinese Academy of Sciences.