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InGaAsP/InP optical waveguide switch operated by a carrier-induced change in the refractive index
Authors:Osamu Mikami  Hiroshi Nakagome
Institution:(1) NTT Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation, 3-9-11, Midoricho, Musashino-shi, 180 Tokyo, Japan;(2) Present address: Department of Electronics and Electrical Engineering, The University, G12 8QQ Glasgow, UK
Abstract:Waveguided semiconductor optical switches operated by a carrier-induced change in the refractive-index associated with the plasma dispersion are proposed. InGaAsP/InP four-port switches having two intersecting single-mode channel waveguides are fabricated by selective liquid-phase epitaxy and investigated at 1.5mgrm wavelength. Optical switching is observed as a result of mode interference in the waveguide intersection region.
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