| 高密度、长波长InGaAs量子点材料的制备与表征 |
| |
| 引用本文： | 李林,张彬,李占国,李梅,刘国军. 高密度、长波长InGaAs量子点材料的制备与表征[J]. 高等学校化学学报, 2010, 31(3): 452 |
| |
| 作者姓名： | 李林 张彬 李占国 李梅 刘国军 |
| |
| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室,长春,130022;长春理工大学高功率半导体激光国家重点实验室,长春,130022;长春理工大学高功率半导体激光国家重点实验室,长春,130022;长春理工大学高功率半导体激光国家重点实验室,长春,130022;长春理工大学高功率半导体激光国家重点实验室,长春,130022 |
| |
| 基金项目： | 国家自然科学基金(批准号:60976038);;高功率半导体激光国家重点实验室基金(批准号:010602)资助 |
| |
| 摘 要： | 利用MOCVD外延生长技术, 对InAs/GaAs量子点材料的生长参数进行调节, 获得了高密度(~5×1010 cm-2)的InAs量子点. 室温荧光光谱表明, 覆盖厚度为5 nm的InGaAs(In组分的摩尔分数为12%)低应变层量子点材料的基态发光波长为1.346 μm, 光谱线宽为24 meV. 研究结果表明, 利用较低温度生长InAs量子点, 结合较高In组分的InGaAs低应变层量子点材料可以实现发光波长红移, 有效地改善材料的光学特性.
|
| 关 键 词： | InAs量子点 1.3μm波长 发光特性 |
| 收稿时间： | 2009-06-01 |
Growth and Characterization of InGaAs Quantum Dots with High Density and Long Emission Wavelength |
| |
| LI Lin,ZHANG Bin,LI Zhan-Guo,LI Mei,LIU Guo-Jun. Growth and Characterization of InGaAs Quantum Dots with High Density and Long Emission Wavelength[J]. Chemical Research In Chinese Universities, 2010, 31(3): 452 |
| |
| Authors: | LI Lin ZHANG Bin LI Zhan-Guo LI Mei LIU Guo-Jun |
| |
| Affiliation: | National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China |
| |
| Abstract: | InAs quantum dots with high-density(～5×10~(10) cm~(-2)) were fabricated on GaAs substrate by metal-organic chemical-vapor deposition(MOCVD), the growth parameters were studied at room temperature, the ground state peak wavelength of photoluminescence(PL) spectra and full width at Half-Maximum(FWHM) are 1.346 μm and 24 meV, respectively, when the QDs were finally capped with 5 nm InGaAs(12% In content) strain-reducing layer(SRL). The results of PL measurements showed that the InGaAs SRL with higher In content which was fatricated at lower growth temperature could improve the optical quality of InAs QDs with strong red-shift in the spectra. |
| |
| Keywords: | InAs quantum dot Optical property |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《高等学校化学学报》浏览原始摘要信息 |
|
点击此处可从《高等学校化学学报》下载全文 |
|
