Infrared phase-conjugate reflection by hot electron-induced optical nonlinearity in n-Ge |
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Authors: | VN Poroshin VM Vasetskii |
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Institution: | (1) Institute of Physics, National Academy of Sciences of Ukraine, 46, Prospect Nauky, Kyiv-39, 03650, Ukraine (Fax: +38-044-265-15-89, E-mail: poroshin@iop.kiev.ua), UA |
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Abstract: | We have studied backward-degenerate four-wave mixing at CO2 laser wavelengths in n-type Ge having a free electron density of N=5×1016 cm-3. The phase conjugation due to the redistribution of free electrons between the equivalent valleys was observed. The effect
occurs only when the electric field E of the light wave is aligned nonsymmetrically relative to the long axes of the valleys in the crystal, and is related to
carrier heating by the infrared radiation.
Received: 11 April 2000 / Revised version: 13 September 2000 / Published online: 10 January 2001 |
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Keywords: | PACS: 42 65 Hw |
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