用光激开关产生高功率亚纳秒电脉冲的研究

 报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果。8mm电极间隙的开关暗态绝缘强度达30kV。分别用ns, ps和fs激光脉冲触发开关的测试表明，开关输出电磁脉冲无晃动。3mm电极间隙开关的最短电流脉冲上升时间小于200ps，脉宽达亚ns；在偏置电压2000伏，光脉冲宽度8ns、能量1.2mJ的触发条件下，峰值电流达560A。用重复频率为76MHz和10⁸Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列。

Investigation of high power sub-nanosecond electrical pulse generated by GaAs photoconductive switches

In this paper, experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nano-second and pico-second and femto-second laser pulse are reported. The switches were insulated by solid multi-layer transparent dielectrics. Dark insulating intensity of the 8mm-gap GaAs switch reached 30kV. Jitter-free current wave form of the 3mm-gap and 8mm-gap GaAs switches were observed when triggered by the laser pulses. The current could be as high as 560A when the 3mm-gap switch was under the voltage of 2kV and triggered by an 8ns and 1 2mJ laser pulse. The same device also revealed good temperal characteristics when triggered by a pico-second laser and 10 8 repeat frequency laser pulse strings. The shortest rising time the 3mm-gap switch response is less than 200ps which is limited by the coaxial cable.