Disorders produced during high-current and high-dose phosphorus ion implantation in silicon |
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Authors: | M. Tamura K. Yagi N. Natsuaki M. Miyao T. Tokuyama |
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Affiliation: | (1) Central Research Laboratory, Hitachi Ltd., 185 Kokubunji, Tokyo, Japan |
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Abstract: | Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers. |
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Keywords: | 61.70 61.80 |
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