Band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface investigated by X-ray photoemission spectroscopy |
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| Authors: | Lingyan Lin Jinling Yu Shuying Cheng Peimin Lu Yunfeng Lai Sile Lin Pengyi Zhao |
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| Affiliation: | 1. Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
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| Abstract: | The band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface is investigated by X-ray photoemission spectroscopy. In2S3 is thermally evaporated onto the contamination-free polycrystalline Cu2ZnSnS4 surface prepared by magnetron sputtering. The valence band offset is measured to be 0.46 ± 0.1 eV, which matches well with the valance band offset value 0.49 eV calculated using “transitivity” method. The conduction band offset is determined to be 0.82 ± 0.1 eV, indicating a ‘type I’ band alignment at the heterojunction interface. |
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