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一种用于MEMS电容式加速度计的116dB动态范围CMOS读出电路
引用本文:龙善丽,刘艳,贺克军,唐兴刚,陈钱.一种用于MEMS电容式加速度计的116dB动态范围CMOS读出电路[J].半导体学报,2014,35(9):095004-5.
作者姓名:龙善丽  刘艳  贺克军  唐兴刚  陈钱
基金项目:国家重点基础研究规划项目
摘    要:A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 /μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5×2.5 mm2 and the current is 3.5 mA.

关 键 词:CMOS读出电路  加速度计  MEMS  动态范围  分贝  CMOS工艺  低频噪声  ASIC

116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer
Long Shanli,Liu Yan,He Kejun,Tang Xinggang and Chen Qian.116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer[J].Chinese Journal of Semiconductors,2014,35(9):095004-5.
Authors:Long Shanli  Liu Yan  He Kejun  Tang Xinggang and Chen Qian
Institution:Huadong Photoelectric Integrated Device Research Institute, Suzhou 215163, China;Huadong Photoelectric Integrated Device Research Institute, Suzhou 215163, China;Huadong Photoelectric Integrated Device Research Institute, Suzhou 215163, China;Huadong Photoelectric Integrated Device Research Institute, Suzhou 215163, China;Nanjing University of Science & Technology, Nanjing 210094, China
Abstract:in-circuit reprogrammable technique MEMS accelerometer modulation and demodulation sensitiv-ity of accelerometer
Keywords:in-circuit reprogrammable technique  MEMS accelerometer  modulation and demodulation  sensitivity of accelerometer
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