Investigation of conductivity of adhesive layer including indium tin oxide particles for multi-junction solar cells

We report connection conductivity ( \(C_{\rm c}\) ) of adhesive which including \(\hbox {In}_2\hbox {O}_3\) – \(\hbox {SnO}_2\) (ITO) particles developed for fabrication of stacked-type-multi-junction solar cells. The commercial 20- \(\upmu \) m sized ITO particles were heated in vacuum at temperature ranging from 800 to 1,300  \(^{\circ }{\rm C}\) for 10 min to increase \(C_{\rm c}\) . 6.2 wt% ITO particles were dispersed in commercial Cemedine adhesive gel to form 100 samples structured with n-type Si/adhesive/n-type Si (n-Si sample) and p-type Si/adhesive/p-type Si (p-Si sample). Current density as a function of voltage (J–V) characteristics gave \(C_{\rm c}\) . It ranged from 4.3 to 1.0 S/cm \(^2\) for the n-Si sample with 800 \(^{\circ }{\rm C}\) heat-treated ITO particles. Its standard deviation was 0.59 S/cm \(^2\) . On the other hand, it ranged from 2.0 to 0.6 S/cm \(^2\) for the p-Si sample with 800  \(^{\circ }{\rm C}\) heat-treated ITO particles. Its standard deviation was 0.22 S/cm \(^2\) . The distribution of \(C_{\rm c}\) mainly resulted from contact efficiency of ITO particles to substrate. We theoretically estimated that present \(C_{\rm c}\) achieved a low loss of the power conversion efficiency ( \(E_{\rm ff}\) ) lower than 0.3 % in the application of fabrication of multi-junction solar cell with an intrinsic \(E_{\rm ff}\) of 30 % and an open circuit voltage above 1.9 V.