Solution-processed P3HT-based photodetector with field-effect transistor configuration

In this paper, we presented a solution-processed photodetector with a configuration of field-effect transistor Au/poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA)/Al, in which P3HT acts as the active layer and PMMA as dielectric layer, and the drain and source electrodes (Au) were fabricated through a shadow mask. Using the top-gate bottom-contact configuration and employing orthogonal solvent to avoid “solution corrosion”, the devices with three different thicknesses (38, 150 and 223 nm) of the P3HT layer were investigated, and all of them showed typical transistor properties and their drain–source current can be controlled by the gate voltage. The photocurrent of the device Au/P3HT(223 nm)/PMMA(930 nm)/Al shows an obvious increment over a broad range of wavelengths from 350 to 650 nm, giving a maximum photo-to-dark current ratio of 2,404 with a photoresponsivity of 22.71 mA/W under the incident 350 nm light at V _DS = ?5 V.