High performance III/V RTD and PIN diode on a silicon (001) substrate |
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Authors: | W Prost V Khorenko A-C Mofor S Neumann A Poloczek A Matiss A Bakin A Schlachetzki F-J Tegude |
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Institution: | (1) Department of Solid-State Electronics, University Duisburg-Essen, 47048 Duisburg, Germany;(2) AZUR SPACE Solar Power GmbH, 74072 Heilbronn, Germany;(3) Institute for Semiconductor Technology, Technical University Braunschweig, 38106 Braunschweig, Germany |
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Abstract: | We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate,
the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The
selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of
these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown
III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior
to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver
circuit on a Si-substrate is proposed and simulated using HSPICE up to 10 Gbit/s.
PACS 73.40.Kp; 73.43.Jn; 73.61.Ey; 78.70.Ck; 78.70.Gq |
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