Electroluminescence in In-ZnSe: Cu-ZnSe(s)-Au structures

The electroluminescent properties of In-ZnSe: Cu-ZnSe(s)-Au structures have been studied in the temperature range from 27 to 300 K. The spectrum of the forward-biased diodes at 27 K consists of emission lines due to the recombination of bound excitons, an associated donor-acceptor pair band with LO-phonon replicas and a deep level emission (green and red bands). At room temperature only the red band was observed. The time-resolved spectra (TRS) of the deep levels emission have also been investigated.