Impact of post-nitridation annealing on ultra-thin gate oxide performance |
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Authors: | Yandong He Ganggang Zhang |
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Institution: | aInstitute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract: | Decoupled-Plasma Nitridation (DPN) process with high level of nitrogen incorporation is widely used in the state-of-the-art technology, in order to reduce gate leakage current and boron penetration. However, due to the low temperature DPN process, the post-nitridation annealing treatment is required to improve the ultra-thin gate oxide integrity. In this paper, the effect of post-nitridation annealing on DPN ultra-thin gate oxide was investigated. The device performance and reliability were evaluated in three different post-nitridation annealing ambient (N2/O2, He, and NO). |
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Keywords: | Plasma nitridation Post-nitridation annealing Gate leakage current HCI NBTI TDDB |
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