A theoretical analysis of epitaxial growth of CuInS2 by chemical vapour deposition |
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| Authors: | C Y Sun H L Hwang C S Fang D C Liu M H Horng |
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| Institution: | (1) National Taiwan University, Taipei, Taiwan, R.o.C.;(2) Fine Products Microelectronics Corporation, Hsifeng, Hsinchu, Taiwan, R.o.C.;(3) National Tsing Hua University, Hsin-chu, Taiwan, R.o.C. |
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| Abstract: | Summary A theoretical analysis has been carried out to investigate the kinetics involved in the CVD growth of CuInS2. A stagnant-layer model is assumed for the numerical, simulation. Computational results for the growth rate as a function
of the substrate temperature, mean, gas velocity and partial pressures in the reaction tube are obtained. This analysis indicates
that the substrate temperature plays a dominant role in the growth rate, which is consistent with our experimental data.
Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16,
1982. |
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| Keywords: | Methods of crystal growth and purification |
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