| GaAIAs/GaAs正面发光管的失效机理研究 |
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| 引用本文： | 沈家树.GaAIAs/GaAs正面发光管的失效机理研究[J].半导体光电,1991(2). |
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| 作者姓名： | 沈家树 |
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| 作者单位： | 重庆光电技术研究所 重庆永川 |
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| 摘 要： | 研究和分析了高辐射GaAlAs/GaAs LED的退化机理。经高温加速老化,估算器件的工作寿命为10~5小时,并估算该器件的激活能为0.58eV。
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| 关 键 词： | 退化 失效 发光管 |
Investigation on Failure Mechanism for GaAs/GaAIAs Surface LEDs |
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| Shen Jiashu Chongqing Optoelectronics Research Institute Yongchuan,Chongqing.Investigation on Failure Mechanism for GaAs/GaAIAs Surface LEDs[J].Semiconductor Optoelectronics,1991(2). |
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| Authors: | Shen Jiashu Chongqing Optoelectronics Research Institute Yongchuan Chongqing |
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| Institution: | Shen Jiashu Chongqing Optoelectronics Research Institute Yongchuan,Chongqing 632163 |
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| Abstract: | The failure mechanism is investigated on the GaAlAs/GaAs surface LED's. The evaluated value of the operating lifetime for the device is about 10~5h with the activation energy of 0.58eV under the condition of high temperature accelerating aging. |
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| Keywords: | Degradation Fallure LED |
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