Institution: | 1. University of Edinburgh, School of Engineering, Kings Buildings, Robert Stevenson Road, Edinburgh, EH9 3FB UK;2. University of Edinburgh, School of Geosciences, The Grant Institute, Kings Buildings, West Mains Road, Edinburgh, EH9 3JW UK;3. Helmholtz Centre Potsdam, German Research Centre for Geosciences, Telegrafenberg, 14473 Potsdam, Germany;4. Univ. Lille, CNRS, INRA, ENSCL, UMR CNRS 8207, UMET, Unité Matériaux et Transformations, 59000 Lille, France;5. Bayerisches Geoinstitut, University of Bayreuth, 95540 Bayreuth, Germany;6. European Synchrotron Radiation Facility, 38043 Grenoble, France;7. Oak Ridge National Laboratory, Bethel Valley Rd, Oak Ridge, TN 37830 USA;8. Institute of Geosciences, Goethe University Frankfurt, 60438 Frankfurt am Main, Germany
Deutsches Elektronen-Synchrotron (DESY), 22607 Hamburg, Germany
University of Potsdam, Institute of Geosciences, 14476 Potsdam, Germany |
Abstract: | Multi-anvil and laser-heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500–1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge?Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge?Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge?Si solid solution family, and is of interest for optoelectronic applications. |