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Ultrathin Al1−xScxN for Low-Voltage-Driven Ferroelectric-Based Devices |
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| Authors: | Georg Schönweger Md Redwanul Islam Niklas Wolff Adrian Petraru Lorenz Kienle Hermann Kohlstedt Simon Fichtner |
| Affiliation: | 1. Institute of Electrical and Information Engineering, Christian-Albrechts-Universität zu Kiel, Kaiserstrasse 2, 24143 Kiel, Germany;2. Institute for Material Science, Christian-Albrechts-Universität zu Kiel, Kaiserstrasse 2, 24143 Kiel, Germany |
| Abstract: | |
| Keywords: | aluminum–scandium–nitride (Al1−xScxN) epitaxial growth ferroelectrics gallium nitride ultrathin |