Ionic Synthesis of Ga1–x In x As Solid Solution Films

The Ga_1–x In _x As compound obtained by In-ion implantation (100 keV and (0.45–6)·10¹⁷ cm^–2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm^–2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor photoelectromotive force. It is shown that x increases from 0.07 up to 0.21, and the band gap decreases from 1.34 down to 1.21 eV as the implantation dose increases. The surface potential decreases from 0.79 down to 0.58 V. A high efficiency of electron-beam annealing is pointed out.