|
|||||
|
|
| 无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀 | |
| 引用本文： | 王光红,王玉芳,施成营,郝建民,冯敏,曹学伟.无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀[J].光散射学报,2007,19(4):337-341. |
| 作者姓名： | 王光红 王玉芳 施成营 郝建民 冯敏 曹学伟 |
| 作者单位： | 1. 南开大学物理科学学院,天津,300071 2. 南开大学信息技术科学学院,天津,300071 3. 中国电子科技集团公司第四十六研究所,天津,300220 |
| 摘 要： | 本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。 |
| 关 键 词： | 多孔碳化硅 电化学腐蚀 拉曼散射 x射线反射 |
| 文章编号： | 1004-5929（2007）04-0337-05 |
| 收稿时间： | 2007-06-30 |
| 修稿时间： | 2007年6月30日 |
Electrochemical etching of n-type 15R-SiC and6H-SiC without UV illumination |
|
| WANG Guang-hong,WANG Yu-fang,SHI Cheng-ying,HAO Jian-min,FENG Min,CAO Xue-wei.Electrochemical etching of n-type 15R-SiC and6H-SiC without UV illumination[J].Chinese Journal of Light Scattering,2007,19(4):337-341. | |
| Authors: | WANG Guang-hong WANG Yu-fang SHI Cheng-ying HAO Jian-min FENG Min CAO Xue-wei |
| Abstract: | The porous n-type 15R-SiC and 6H-SiC were prepared by electrochemical etching without external illumination.The porous layers were analyzed using scanning electron microscopy(SEM),Raman scattering,and X-ray diffraction(XRD). The porous structures depend on the crystal structure of substrates and anodization conditions.For the porous 15R-SiC,the semi-cylinder structure of the porous network has been observed and the porosity is about 66%. |
| Keywords: | porous SiC electrochemical etching Raman scattering x-ray reflectivity |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |