| 抛光工艺对GaAs抛光片粗糙度的影响 |
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| 引用本文： | 吕菲,王云彪,张伟才,武永超,赵权.抛光工艺对GaAs抛光片粗糙度的影响[J].半导体技术,2009,34(8). |
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| 作者姓名： | 吕菲 王云彪 张伟才 武永超 赵权 |
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| 作者单位： | 中国电子科技电集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 研究了化学机械抛光过程中抛光布、抛光液中SiO2溶胶粒径、pH值以及清洗工艺对GaAs抛光片表面粗糙度的影响,为降低粗糙度而保持一定的抛光速率,应尽量采用多步抛光的方式,逐步降低抛光布的硬度和SiO2溶胶粒径,抛光液的pH值也要在合适的范围。因臭氧水的清洗工艺不会增加粗糙度,不失为一种控制GaAs抛光片表面粗糙度的有效方法。
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| 关 键 词： | 化学机械抛光 粗糙度 抛光速率 抛光雾 清洗工艺 抛光液 臭氧水 |
Effect of Polishing Processes on the Roughness of GaAs Wafers |
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| Lü Fei,Wang Yunbiao,Zhang Weicai,Wu Yongchao,Zhao Quan.Effect of Polishing Processes on the Roughness of GaAs Wafers[J].Semiconductor Technology,2009,34(8). |
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| Authors: | Lü Fei Wang Yunbiao Zhang Weicai Wu Yongchao Zhao Quan |
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| Institution: | The 46th Research Institute;CETC;Tianjin 300220;China |
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| Abstract: | The effects of polishing pad,the particle diameter of silicon dioxide in slurry,the pH of slurry and cleaning technique on the roughness of GaAs wafers were investigated.To reduce the roughness and keep agreeable polishing rate,different polishing processes were needed,the hardness of polishing pad and the particle diameter of silicon dioxide in slurry should be reduced gradually,and the pH of slurry should be kept at appropriate range.Ozone solution has good performance in cleaning process,leading no incre... |
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| Keywords: | CMP roughness polishing rate haze cleaning technique slurry ozone solution |
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